Design and simulation of an aluminum nitride piezoelectric resonant pressure sensor
نویسندگان
چکیده
In this paper, a novel aluminum nitride (AlN) resonant pressure sensor with piezoelectric-excitation and piezoelectric-detection is presented. The key structure of resonator an AlN flexible beam. Parallel electrodes are designed on the beam to excite resonance in-plane. All layers grown silicon-on-insulator (SOI) wafer by deposition process. Anchor islands fabricated in top silicon layer SOI. optimized finite element simulation software, performance simulated. frequency 60.04 kHz, sensitivity 13.6 Hz/kPa under range 0–120 kPa. This advantageous that its fabrication processes simple, it new choice for sensors.
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2022
ISSN: ['2158-3226']
DOI: https://doi.org/10.1063/5.0088626